Researchers
Dr. Tien-Ming Chuang, Dr. Jhinhwan Lee, Dr. Curry Taylor, Chung Koo Kim

Introduction

Spectroscopic Imaging Scanning Tunneling Microscopy (SI-STM) has become a key tool for research of advanced magnetic/electronic materials. It reveals directly the impact of dopant profiles, crystalline disorder, and electronic/magnetic phase transitions on atomic-scale electronic structure. Dramatic and unusual changes in electronic/magnetic structure are induced by very high magnetic fields in many important materials. These include for example, quantum hall effects in graphene, superconductor-insulator transitions in hole-doped, and electron-doped cuprates, field-induced quantum phase transitions in transition metal oxides e.g. Sr₃Ru₂O₇, colossal magneto-resistance in manganites, spin density wave / quantum hall / p-wave superconducting transitions in Bechgaard salts, and possible field-induced electronic supersolid phases in cuprates.

With 20T magnetic field applied, we can further investigate into wider range of interesting topics. They include Integral / Fractional Quantum Hall effect in graphene, field-driven superconducting-normal transition in electron-doped cuprates, and colossal magneto-resistance (CMR) in bi-layer manganites.

For brief introduction of how STM works, click here.

We are currently in designing stage, so pictures and results are yet to come.

Instrument
(20T SI-STM currently being constructed)

Results

Collaborators