The Blakely Group

Surface science research at Cornell University Materials Science and Engineering Department and Materials Science Center

STM picture of Si(001)


Welcome to the homepage of Professor Jack Blakely and his team of dedicated researchers at the Cornell University College of Engineering Materials Science and Engineering Department / Cornell Center for Materials Research. The team's research includes . . . 

Some Recent Research Papers:

  1. "Surfaces of Silver Halides: Controlled Decomposition in Scanning Probe Microscopes",

    2. Jack Blakely and Andrew Swanson, Proceedings of International Conference on Ceramic Materials, Florence, 1998. (PDF file) See also Surface Science, 394, 221, (1997)
  2. “Atomic Step Dynamics on Periodic Semiconductor Surface Structures”, Jack M. Blakely, So Tanaka and Ruud Tromp, Japan J. Electron Microscopy, to be published, 1999. (PDF file)
  3. “Lattice Strain in Oxidized Si Nanostructure Arrays from X-ray Measurements”, S.Tanaka, C.C. Umbach, Q. Shen, and J.M. Blakely, Thin Film Solids, 343-344, 365, 1999. (Abstract only)
  4. "Formation and Stability of Large Step-free Areas on Si(001) and Si(111)”, Doohan Lee and Jack Blakely, Surface Science, 445, 32, (2000). (PDF file)
  5. "Oxidation Studies on Si(111) with Ultra-Low Step Density", Antonio Oliver and Jack Blakely, Cornell Center for Materials Research Report #8337, June 1999. (Abstract only)
  6. "Instabilities and Point Defects at Step-free Si(001) and (111) Terraces during High Temperature Annealing", Doohan Lee and Jack Blakely, MRS Symposium 1999
  7. "Thin SiO2 layers on Si (111) with ultralow atomic step density", Antonio Oliver and Jack Blakely, J. Vac. Sci. Technol. B, 18(6), 2862, (2000). (PDF file)
  8. "Development of a sub-picoamp scanning tunneling microscope for oxide surfaces", Christopher C. Umbach and Jack M. Blakely, (In press, Applied Surface Science)
  9. "A Growth Method for Creating Arrays of Atomically Flat Mesas on Silicon", Doohan Lee, Jack Blakely, Todd W. Schroeder and J. R. Engstrom, (In press, Applied Physics Letters)

Who are we?

Series of pits of monoatomic depth on Si(001).Note that they are not concentric due to electromigration

Atomic Force Microscope images of a portion of a Si(111) wafer surface before (upper section) and after (lower section) growth of ~7nm of thermal oxide.


Last Update: Feb. 2001

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