Muller Group Publications Understanding Materials, Atom by Atom

 

2008

“ Formation of Guided Cherenkov Radiation in Silicon-Based Nanocomposites”, Aycan Yurtsever, Martin Couillard, and David A. Muller, Phys. Rev. Lett. 100, 217402 (2008).

 

"Depth Sectioning of Individual Dopant Atoms with Aberration-Corrected Scanning Transmission Electron Microscopy",

Huolin L. Xin, Varat Intaraprasonk, David A. Muller,

Applied Physics Letters, 92, 013125 (2008).

 

“Imaging the Phase Separation in Atomically Thin Buried SrTiO₃ Layers by Electron Channeling”,

L. Fitting Kourkoutis, C. Stephen Hellberg, V. Vaithyanathan, Hao Li, M. K. Parker, K. E. Andersen,

D. G. Schlom, and D. A. Muller,

Phys. Rev. Lett. 100, 036101 (2008).

 

“Self-Assembly of Four-Layer Woodpile Structure from Zigzag ABC Copolymer/Aluminosilicate Concertinas”,

Gilman E. S. Toombes, Surbhi Mahajan, Matthew Weyland, Anurag Jain,&, Phong Du, Marleen Kamperman,

Sol M. Gruner, David A. Muller, and Ulrich Wiesner,

Macromolecules, http://dx.doi.org/10.1021/ma071004s

 

“Effects of specimen tilt in ADF-STEM imaging of a-Si/c-Si interfaces”, 

Z. Yu, D. A. Muller, and J. Silcox,

Ultramicroscopy (2008) http://dx.doi.org/10.1016/j.ultramic.2007.08.007

 

“Atomic-Scale Chemical Imaging of Composition and Bonding by Aberration-Corrected Microscopy”,

D. A. Muller, L. Fitting Kourkoutis, M. Murfitt, J. H. Song, H. Y. Hwang, J. Silcox, N. Dellby,  O. L. Krivanek,

Science 319, 1073-1076 (2008).

 

“Competition between bulk and interface plasmonic modes in valence electron energy-loss spectroscopy of ultrathin SiO₂ gate stacks”,

M. Couillard,  A. Yurtsever, and D. A. Muller,

Phys Rev B 77, 085318 (2008).

2007

“Superconducting Interfaces Between Insulating Oxides”,

N. Reyren, S. Thiel, A. D. Caviglia, L. Fitting Kourkoutis, G. Hammerl, C. Richter, C. W. Schneider, T. Kopp,

A.-S. Rüetschi, D. Jaccard, M. Gabay, D. A. Muller, J.-M. Triscone, J. Mannhart,

Science 317, 1196-1199 (2007)

 

“Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN”,

A. Schmehl, V. Vaithyanathan, A. Herrnberger, S. Thiel, C. Richter, M. Liberati, T. Heeg, M. Rockerath,

L. Fitting Kourkoutis, S. Muhlbauer, P. Bonni, D. A. Muller, Y. Barash, J. Schubert, Y. Idzerda, J. Mannhart,

D. G. Schlom,

Nature Materials 6, 882–887 (2007).

 

“Three-Dimensional Imaging of Carbon Nanotubes Deformed by Metal Islands”,

Judy J. Cha, M. Weyland, J.-F. Briere, I. P. Daykov, T. A. Arias, and D. A. Muller,

Nano Letters 7 3770 -3773 (2007).

 

“Valence Changes and Structural Distortions in “Charge Ordered” Manganites Quantified by Atomic-Scale Scanning Transmission Electron Microscopy”, 

J. C. Loudon, L. Fitting Kourkoutis, J. S. Ahn, C. L. Zhang, S.-W. Cheong, and D. A. Muller,

Phys. Rev. Lett. 99 237205 (2007).

 

 “Spatially resolved electron energy-loss spectroscopy of electron-beam grown and sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions”,

Judy J. Cha, J. C. Read, R. A. Buhrman, and David A. Muller,

Appl. Phys. Lett., 91, 062516 (2007).

 

“Effects of interfacial organic layers on nucleation, growth, and morphological evolution in atomic layer thin film deposition”,

A. Dube, M. Sharma, P. F. Ma, P. A. Ercius, D. A. Muller, J. R. Engstrom,

J. Phys. Chem. C 111 (29)  11045-11058 ( 2007).

 

“Asymmetric interface profiles in LaVO₃ /SrTiO₃ heterostructures grown by pulsed laser deposition”,

L. Fitting Kourkoutis, D. A. Muller,Y. Hotta,  H. Y. Hwang,

Appl. Phys. Lett., 91, 163101 (2007).

2006

“Why Some Interfaces can never be Sharp”,  

N. Nakagawa,  H. Y. Hwang and D. A. Muller,  Nature Materials, 5 204-209 (2006)

 

“Nanometer Scale Electronic Reconstruction at the Interface between LaVO₃ and LaVO₄”,

L. Fitting Kourkoutis, Y. Hotta, T. Susaki, H. Y. Hwang and D. A. Muller, Phys. Rev. Lett. 97, 256803 (2006).

 

“Room Design for High Performance Electron Microscopy”,

David A. Muller, Earl Kirkland, Malcom G. Thomas,  John L. Grazul, Lena Fitting, Matthew Weyland,

Ultramicroscopy  106 (2006) 1033–1040.

 

“Subtleties in ADF imaging and spatially resolved EELS: A case study of low-angle twist boundaries in SrTiO₃”

L. Fitting, S. Thiel, A. Schmehl, J. Mannhart, and D. A. Muller, Ultramicroscopy  106 (2006) 1053–1061.

 

“Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography”,

Peter Ercius, Matthew Weyland, and David A. Muller, Lynne M. Gignac, 

Appl. Phys. Lett. 88 243116 (2006).  

(Also featured in the June 26, 2006 issue of Virtual Journal of Nanoscale Science & Technology).

 

“Lattice-polarization effects on electron-gas charge densities in ionic superlattices”,

D. R. Hamann, D. A. Muller, and H. Y. Hwang, Phys. Rev. B 73, 195403.1-6 (2006).

 

“Growth and epitaxial structure of LaVO_x films”,

Y. Hotta, Y. Mukunoki, T. Susaki, and H. Y. Hwang, L. Fitting and D. A. Muller Appl. Phys. Lett.,89, 031918 (2006).

 

 

"Three-dimensional imaging of nonspherical silicon nanoparticles embedded in silicon oxide by plasmon tomography",

Aycan Yurtsever, Matthew Weyland, and David A. Muller, Appl. Phys. Lett. 89, 151920 (2006).

 

2005

“HfO₂ and Al₂O₃ gate dielectrics on GaAs grown by atomic layer deposition”,

M. M. Frank, Glen D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal,

J. L. Grazul and D. A. Muller, Appl. Physics Lett. 86 152904-1.4 (2005).

 

“Superconductors: Catching dopants in action”,

Jochen Mannhart and David A. Muller, Nature Materials, 4, p. 431-43 (2005).

 

“A Sound Barrier for Silicon”,

D. A. Muller, Nature Materials, 4 645–647 (2005).

 

“Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry and Structure”,

MRS Symposium proceedings, V839, (2005),

Editors David C. Martin, David A. Muller, Paul A. Midgley, Eric A. Stach, (MRS Warrendale PA)

 

2004

“Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO₃”,

David A. Muller, Naoyuki Nakagawa, Akira Ohtomo, John L. Grazul & Harold Y. Hwang,

Nature 430, 657-661 (2004).

 

“Depth-Dependent Imaging of Individual Dopant Atoms in Silicon”,

P. M. Voyles, D. A. Muller, E. J. Kirkland,  Microscopy and Microanalysis 10, 291-300 (2004).

 

“Study of strain fields at a-Si/c-Si interface”,

Zhiheng Yu, David A. Muller, and John Silcox, J. Appl. Phys. 95, 3362 (2004).

 

“Star-Shaped Azo-Based Dipolar Chromophores: Design, Synthesis, Matrix Compatibility, and Electro-optic Activity”,

Padma Gopalan, Howard E. Katz, David J. McGee, Chris Erben, Thomas Zielinski, Danielle Bousquet,

David Muller, John Grazul, Ylva Olsson, Journal of the American Chemical Society,  126, 1741-1747 (2004),

 

2003

• “Direct Fabrication of Large Micropatterned Single Crystals”, J. Aizenberg, D. A. Muller, J. L. Grazul, D. R. Hamann, Science, 299, 1205-1208 (2003).

 

• “Dopant mapping for the nanotechnology age”, M. R. Castell, D. A. Muller & P. M. Voyles,  Nature Materials 2, 129–131 (2003).

 

• “Imaging individual atoms inside crystals with ADF-STEM”, P. M. Voyles, J. L. Grazul, D. A. Muller,  Ultramicroscopy 96 251-273 (2003).

 

• “Evidence for a New Class of Defects in Highly n-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes”,  P. M. Voyles, D. J. Chadi, P. H. Citrin, D. A. Muller, J. L. Grazul, P. A. Northrup, and H.-J. L. Gossmann, Phys. Rev. Lett. 91, 125505 (2003).
• “Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition”, G. D. Wilk and D. A. Muller, Appl. Physics Lett. 83 3984-3986 (2003).
• "Morphology and Crystallization Kinetics in HfO2 Thin Films Grown by Atomic Layer Deposition", M.-Y. Ho, H. Gong, G.D. Wilk, B.W. Busch, M.L. Green, P.M. Voyles, D.A. Muller, M. Bude, W.H. Lin, A. See, M.E. Loomans, S.K. Lahiri, and P.I. Räisänen,. J. Appl. Phys. 93 1477-1483 (2003).
• “Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy”, A.C. Diebold, B. Foran, C. Kisielowski, D. A. Muller, S.J. Pennycook, E. Principe, and S. Stemmer, Microsc. Microanal. 9, 493–508, 2003

 

2002

• “Materials Characterization of Alternative Gate Dielectrics”, Brett W. Busch, Olivier Pluchery, Yves J. Chabal, David A. Muller, Robert L. Opila, J. Raynien Kwo, and Eric Garfunkel,  MRS Bulletin, 27(3)  206-211 (2002).

 

• “Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si”, P. M. Voyles, D. A. Muller, J. L. Grazul, P. H. Citrin, and H.-J. Gossmann, Nature, 416 826-829 (2002).

 

• “Epitaxial growth and electronic structure of LaTiO_x films”, A. Ohtomo, D. A. Muller, J. L. Grazul, H. Y. Hwang,  Appl. Physics Lett. 80 3922 (2002).

 

• “Properties of GeSi Nanocrystals Embedded in a Hexagonal SiC”, U. Kaiser, J. Biskupek, D. A. Muller, K. Gartner, C.H. Schubert, Cryst. Res. Tech. 37 391-406 (2002).

 

• “Structural studies of ultrathin zirconia dielectrics”, Shriram Ramanathan, Paul C. McIntyre, Jan Luning, Piero Pianetta, and David A. Muller, Phil. Mag. Lett 82(9) 519-528 (2002).

 

• “Absolute and Approximate Calculations of Electron-Energy-Loss Spectroscopy Edge Thresholds”, D. R. Hamann and David A. Muller, Phys. Rev. Lett., 89, 126404 (2002).

 

• “Fluctuation Microscopy in the STEM”, P. M. Voyles, D. Muller,  Ultramicroscopy 93 54-66(2002).

 

• “Artificial Charge-Modulation in Atomic-scale Perovskite Titanate Superlattices”, A. Ohtomo, D. A. Muller, J. L. Grazul, H. Y. Hwang, Nature, 419 378-380 (2002).

 

• “Direct Observation of Defect-Mediated Cluster Nucleation”, U. Kaiser, D. A. Muller, J. Grazul, A. Chuvulin, M. Kawasaki, Nature Materials 1 102-105 (2002).

 

• “Nucleation and growth of atomic layer deposited HfO₂ gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO₂ or Si–O–N) underlayers”, M. L. Green, M. Y. Ho, B. Busch, G. D. Wilk,and T. Sorsch; T. Conard, B. Brijs, and W. Vandervorst; D. A. Muller, M. Bude, and J. Grazul, J. App. Phys., 92 7168-7174 (2002).

 

2001

• “High k Gate Dielectrics Gd₂O₃ and Y₂O₃ for Si”, J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, D. A. Muller, B. J. Sapjeta, T. S. Lay, J. P. Manaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergent, J. M. Rosamilia., J. App. Phys.89 3920 (2001).

 

• “Evolution of the Interfacial Electronic Structure During Thermal Oxidation”, D. A. Muller and J. B. Neaton, Chapter 11 in “Fundamental Aspects of Silicon Oxidation”  ed. Y. Chabal,  Springer, 219-244 (2001).

 

• "Optimizing the Environment for Sub-0.2nm Scanning Transmission Electron Microscopy," D. A. Muller, J. Grazul, Journal of Electron Microscopy, 50 219-226 (2001).

 

• “Simulation of Thermal Diffuse Scattering Including a Detailed Phonon Dispersion Curve”, D. A. Muller, B. Edwards, E. J. Kirkland, J. Silcox, Ultramicroscopy, 86 371 (2001).

 

• “Gate Dielectric Metrology using Advanced TEM Measurements”, D. A. Muller, in Characterization and Metrology for Advanced ULSI ed. A.C. Diebold, Amer. Inst. Phys., 500 – 505 (2001).

 

• “Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer”, Dubon, O.D.; Evans, P.G.; Chervinsky, J.F.; Aziz, M.J.; Spaepen, F.; Golovchenko, J.A.; Chisholm, M.F.; Muller, D.A., Appl. Phys. Lett. 78 (2001) 1505-7

 

 

• “Growth and Characterization of Ultra Thin ZrO₂ Dielectrics by UV – Ozone Oxidation”, Shriram Ramanathan, Carl J. Maggiore , David A. Muller, Glen D. Wilk Chang Man Park and Paul C. McIntyre, App. Physics Lett. 79 2621 (2001).

 

• “Effect of Oxygen Stoichiometry on the Electrical Properties of Zirconia Gate Dielectrics”, Shriram Ramanathan, David A. Muller, Glen D. Wilk, Chang Man Park and Paul C. McIntyre, Appl. Physics Lett 79 3311 (2001).

 

• “Atomic Scale Measurements of the Interfacial Electronic Structure and Chemistry of Zirconium Silicate Gate Dielectrics”, David. A. Muller, Glenn. D. Wilk, Appl. Physics Lett 79 4195 (2001).

 

2000

• “Electronic properties of the Si/SiO₂ interface from first principles”, J. B. Neaton, D. A. Muller, N. W. Ashcroft, Phys. Rev. Lett. 85,  1298-1301 (2000)
  
  
• “First Principles Simulation of a Ceramic/Metal Interface with Misfit”, R. Benedek, A. Alavi, D. N. Seidman, L.H. Yang, D.A. Muller, and C. Woodward, Phys. Rev. Lett. 84,  3362-3365   (2000)

 

• "Gate Oxide Characterization using Annular Dark Field Imaging", D. A. Muller, F. H. Baumann,  JEOL News  35E, 6-9 (2000).

1999

• “Electron Microscopy:  Probing the Atomic Structure and Chemistry of Grain  and Defects,” D. A. Muller and M. J. Mills, Materials Science and Engineering A260 12-28 (1999).

 

• “Why Changes In Bond Lengths And Cohesion Lead To Core-Level Shifts In Metals, And Consequences For The Spatial Difference Method”, D. A. Muller,  Ultramicroscopy, 78,  163-174 (1999).

 

• “The electronic structure at the atomic scale of ultra-thin gate oxides”, D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann and G. Timp, Nature, 399, 758-761 (1999).

 

• “Atomic Scale Structure of Metal/Ceramic Interfaces II: Solute Segregation at MgO/Cu(Ag) and CdO/Ag(Au) Interfaces”, D. A. Shashkov, D. A. Muller and D. N. Seidman, Acta Materialia, 47(15-16)  3953-3963, (1999).

 

• “Geometric Frustration of 2D Dopants in Silicon:  Surpassing Electrical Saturation," P. H. Citrin, D. A. Muller, H.-J. Gossmann, R. Vanfleet and P. A. Northrup, Phys. Rev. Lett. 83, 3234 (1999).

 

• “Atomic Scale Structure of Metal/Ceramic Interfaces II: Solute Segregation at MgO/Cu(Ag) and CdO/Ag(Au) Interfaces”, D. A. Shashkov, D. A. Muller and D. N. Seidman, Acta Mater. 47 3953-3964 , (1999).

 

• “Atomic-scale studies of the electronic structure of ceramic/metal interfaces: {222}MgO/Cu”,  D.A. Muller, D.N. .Shashkov, R. Benedek, L.H. Yang, J. Silcox, D. N. Seidman, Materials Science Forum 294,  99-102 (1999)

 

1998

• “Atomic Scale Observations of Metal-Induced Gap States at {222} MgO/Cu Interfaces,” D. A. Muller, D. A. Shashkov, R. Benedek, L. H. Yang, J. Silcox and D. N. Seidman, Phys. Rev. Lett. 80, 4741 (1998).
  
  
• “Connections Between the Electron Energy Loss Spectra, the Local Electronic Structure and the Physical Properties of a Materials:  A Study of Nickel Aluminum Alloys,” D. A. Muller, D. J. Singh and J. Silcox, Phys. Rev. B57, 8181, (1998).

 

• “A Simple Model for Relating EELS and XAS Spectra of Metals to Changes in Cohesive Energy,” D. A. Muller, Phys. Rev. B , 58, 5989 (1998).

 

• “Measurement and models of electron-energy loss spectroscopy core-level shifts in nickel aluminium intermetallics,” D. A. Muller, P. E. Batson and J. Silcox, Phys. Rev. B , 58, 11970 (1998).

 

• “Electron Scattering and Transmission Through SCALPEL Masks”, M. M. Mkrtchyan, J. A. Liddle, A. E. Novembre, W. K. Waskiewicz, G. P. Watson, L. R. Harriott, D. A. Muller, J. of Vacuum Science & Technology B16: (6) 3385-3391 (1998).

 

• “Structure, Bonding and Property Changes Due to Grain Boundary Segregation”, Subramanian S, Muller DA, Silcox J, Sass SL, DEFECT AND DIFFUSION FORUM ,156: 93-93 (1998).

 

1997

• “Chemistry, Bonding and Fracture of Grain-Boundaries in Ni₃Si,” S.  Subramanian, D. A. Muller, J. Silcox and S. L. Sass, Acta Mater., 45, 3565 (1997).

 

• "The Role of Chemistry in Controlling the Bonding and Fracture Properties of Grain Boundaries in L1(2) Intermetallic Compounds", Subramanian S, Muller DA, Silcox J, Sass SL, Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing, 240, 297-308 (1997).

1996

• “Structure, Chemistry and Bonding at Grain Boundaries in Ni₃Al I. The Role of Boron in Ductilizing Grain Boundaries,” D. A. Muller, S. Subramanian, S. L. Sass, J. Silcox and P. E. Batson, Acta. Met. 44, 1637 (1996).
  
  
• “Structure, Chemistry and Bonding at Grain Boundaries in Ni₃Al II. The Structure of Small Angle Boundaries, Ni-Enrichment and Its Influence on Bonding, Structure, Energy and Properties,” S. Subramanian, D. A. Muller, S. L. Sass, J. Silcox and P. E. Batson, Acta. Met. 44, 1647 (1996).
  
  

1995

• “Radiation Damage of Ni₃Al by 100 keV Electrons,” D. A. Muller and J. Silcox, Phil. Mag. B7, 1375 (1995).
  
  
• “Delocalization in Inelastic Electron Scattering,” D. A. Muller and J. Silcox, Ultramicroscopy 59, 195 (1995).
  
  

• “Near Atomic Scale Studies of Electronic Structure at Grain Boundaries in Ni₃Al,” D. A. Muller, S. Subramanian, S. L. Sass, J. Silcox and P. E. Batson, Phys. Rev. Lett. 75, 4744 (1995).

 

1993-1994

• “Mapping sp² and sp³ States of Carbon at Sub-Nanometer Spatial Resolution,” D. A. Muller, Y. Tzou, R. Raj and J. Silcox, Nature 366, 23/30, 725 (1993).

 

• “EELS at Buried Interfaces:  Pushing Towards Atomic Resolution,” P. E. Batson, N. D. Browning and D. A. Muller, MSA Bulletin 24 (1), 371 (1994).

1992

• “The Structure of the C₇₀ Molecule,” D. R. McKenzie, C. A. Davis, D. J. H. Cockayne, D. A. Muller and A. M. Vassalo, Nature, 355 (1992).

 

• “Negatively Curved Graphitic Sheet Model of Amorphous Carbon,” S. J. Townshend, T. J. Lenosky, D. A. Muller, C. S. Nichols and V. Elser, Phys. Rev. Lett. 69 (6), 921 (1992).

 

1991

• “Comprehensive Stress Induced Formation of Thin Film Tetrahedral Amorphous Carbon,” D. R. McKenzie, D. A. Muller and B. A. Pailthorpe, Phys. Rev. Lett. 67 (6), p. 773 (1991).
  
  
• “Properties of Tetrahedral Amorphous Carbon Prepared by Vacuum Arc Deposition,” D. R. McKenzie, D. A. Muller, B. A. Pailthorpe, Z. H. Wang et al., Diamond and Related Materials, 1, 51 (1991).
  
  
• “Electron Optical Characterization of Cubic Boron Nitride Prepared by Reactive Ion Plating,” D. R. McKenzie, D. J. H. Cockayne, D. A. Muller, M. Murakawa, S. Miyake and S. Watanabe, J. Appl. Phys. 70 (6), 3007 (1991).
  
  
• “Electron Diffraction of Amorphous Thin Films Using PEELS,” D.  Cockayne, D.  McKenzie and D. A. Muller, Microscopy, Microanalysis, Microstructures 2, 359 (1991).
  
  
• “Synthesis, Structure and Applications of Amorphous Diamond,” D. R. McKenzie, D. A. Muller, D. Segal, D. J. H. Cockayne, G. Amaratunga and R. Silva, Thin Solid Films, 206, 198 (1991).